CMLDM3757 datasheet(1/2 Pages) CENTRAL

부품명	CMLDM3757

상세설명	SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

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제조업체	CENTRAL [Central Semiconductor Corp]

홈페이지	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL N-CH (Q1)

P-CH (Q2)

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current (Steady State)

ID

540

430

mA

Maximum Pulsed Drain Current (tp=10μs)

IDM

1500

750

mA

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C)

N-CH (Q1)

P-CH (Q2)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

IGSSF, IGSSR VGS=4.5V, VDS=0

-

5.0

-

2.0

μA

IDSS

VDS=16V, VGS=0

-

1.0

-

1.0

μA

BVDSS

VGS=0, ID=250μA

20

-

20

-

V

VGS(th)

VDS=VGS, ID=250μA

0.45

1.0

0.45

1.0

V

VSD

VGS=0, IS=350mA

-

1.2

-

1.2

V

rDS(ON)

VGS=4.5V, ID=540mA

-

0.55

-

Ω

rDS(ON)

VGS=4.5V, ID=430mA

-

0.9

Ω

rDS(ON)

VGS=2.5V, ID=500mA

-

0.7

-

Ω

rDS(ON)

VGS=2.5V, ID=300mA

-

1.2

Ω

rDS(ON)

VGS=1.8V, ID=350mA

-

0.9

-

Ω

rDS(ON)

VGS=1.8V, ID=150mA

-

2.0

Ω

CMLDM3757

SURFACE MOUNT

N-CHANNEL AND P-CHANNEL

ENHANCEMENT-MODE

COMPLEMENTARY MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM3757

consists of complementary N-Channel and P-Channel

Enhancement-mode silicon MOSFETs designed for

high speed pulsed amplifier and driver applications.

These MOSFETs offer Very Low rDS(ON) and Low

Threshold Voltage.

MARKING CODE: 3C7

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

• Device is Halogen Free by design

SOT-563 CASE

R1 (22-September 2010)

www.centr a lsemi.com

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