| 전자부품 데이터시트 검색엔진 |
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SPP06N80C3. 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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SPP06N80C3. 데이터시트(HTML) 6 Page - Infineon Technologies AG |
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6 / 10 page ![]() SPP06N80C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6 A pulsed I F=f(V SD); ; t p=10 µs parameter: V DD parameter: T j 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=1.2 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 25 °C 150 °C 150°C (98%) 25°C (98°C) 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 V SD [V] 160 V 640 V 0 2 4 6 8 10 0 10 20 30 40 Q gate [nC] 680 720 760 800 840 880 920 960 -60 -20 20 60 100 140 180 T j [°C] 0 50 100 150 200 250 25 50 75 100 125 150 T j [°C] Rev. 2.9 page 6 2008-10-15 |
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