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CYDM064B16 데이터시트(PDF) 13 Page - Cypress Semiconductor |
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CYDM064B16 데이터시트(HTML) 13 Page - Cypress Semiconductor |
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13 / 27 page ![]() CYDM064B16 CYDM128B16 CYDM256B16 Document #: 001-00217 Rev. *H Page 13 of 27 AC Test Loads and Waveforms 1.8V GND 90% 90% 10% 10% ALL INPUT PULSES (a) Normal Load R1 3.0V/2.5V/1.8V OUTPUT R2 C = 30 pF VTH = 0.8V OUTPUT (b) Thévenin Equivalent (Load 1) (c) Three-State Delay (Load 2) R1 R2 3.0V/2.5V/1.8V OUTPUT RTH = 6 kΩ ≤ 3 ns ≤ 3 ns including scope and jig) (Used for tLZ, tHZ, tHZWE, and tLZWE 3.0V/2.5V 1.8V R1 1022Ω 13500Ω R2 792Ω 10800Ω C = 30 pF C = 5 pF Notes 23. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC/2, input pulse levels of 0 to VCC, and output loading of the specified IOI/IOH and 30 pF load capacitance. 24. To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time. 25. At any temperature and voltage condition for any device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 26. Test conditions used are Load 3. 27. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform. Switching Characteristics for VCC = 1.8V Over the Operating Range[23] Parameter Description CYDM256B16, CYDM128B16, CYDM064B16 Unit -55 Min Max Read Cycle tRC Read Cycle Time 55 ns tAA Address to Data Valid 55 ns tOHA Output Hold From Address Change 5 ns tACE [24] CE LOW to Data Valid 55 ns tDOE OE LOW to Data Valid 30 ns tLZOE [25, 26, 27] OE Low to Low Z 5 ns tHZOE [25, 26, 27] OE HIGH to High Z 25 ns tLZCE [25, 26, 27] CE LOW to Low Z 5 ns tHZCE [25, 26, 27] CE HIGH to High Z 25 ns tPU [27] CE LOW to Power up 0 ns tPD [27] CE HIGH to Power down 55 ns tABE [24] Byte Enable Access Time 55 ns [+] Feedback |
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