BMS3003

No. A1907-1/5

Features

•

ON-resistance RDS(on)1=5.0mΩ (typ.)

•

Input capacitance Ciss=13200pF (typ.)

•

4V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--60

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--78

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--312

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C40

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

420

mJ

Avalanche Current *2

IAV

--60

A

Note :

*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ)

7525-002

D2210QA TKIM TC-00002546

SANYO Semiconductors

DATA SHEET

BMS3003

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Ordering number : ENA1907

Product & Package Information

• Package

: TO-220ML(LS)

• JEITA, JEDEC

: SC-67, SOT-186A

• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine

Marking

Electrical Connection

1

3

2

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220ML(LS)

0.75

0.7

12 3

10.0

1.2

1.6

2.55

2.55

4.5

2.8

3.2

MS3003

LOT No.