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MCP14E9 데이터시트(PDF) 1 Page - Microchip Technology |
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MCP14E9 데이터시트(HTML) 1 Page - Microchip Technology |
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1 / 30 page ![]() © 2011 Microchip Technology Inc. DS25005A-page 1 MCP14E9/10/11 Features • High Peak Output Current: 3.0A (typical) • Independent Enable Function for Each Driver Output • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • Low Shoot-Through/Cross-Conduction Current in Output Stage • High Capacitive Load Drive Capability: -tR: 14 ns with 1800 pF load (typical) -tF: 17 ns with 1800 pF load (typical) • Short Delay Times: -tD1: 45 ns (typical) -tD2: 45 ns (typical) • Low Supply Current: - With Logic ‘1’ Input/Enable – 1 mA (typical) - With Logic ‘0’ Input/Enable – 300 µA (typical) • Latch-up Protected: Passed JEDEC JESD78A • Logic Input will Withstand Negative Swing, up to 5V • Space-Saving Packages: - 8-Lead SOIC, PDIP, 6x5 DFN Applications • Switch Mode Power Supplies • Pulse Transformer Drive • Line Drivers • Motor and Solenoid Drive General Description The MCP14E9/10/11 devices are high-speed MOSFET drivers, capable of providing 3.0A of peak current. The dual inverting, dual non-inverting and complementary outputs are directly controlled from either TTL or CMOS (3V to 18V). These devices also feature low shoot-through current, near matched rise/fall times and propagation delays, which make them ideal for high switching frequency applications. The MCP14E9/10/11 devices operate from a 4.5V to 18V single power supply and can easily charge and discharge 1800 pF of MOSFET gate capacitance. They provide low enough impedances, in both the ON and OFF states, to ensure the MOSFETs’ intended state will not be affected, even by large transients. The additional control of the MCP14E9/10/11 outputs is allowed by the use of separate enable functions. The ENB_A and ENB_B pins are active-high and are internally pulled up to VDD. The pins may be left floating for standard operation. The MCP14E9/10/11 dual output 3.0A driver family is offered in both surface-mount and pin-through-hole packages with a -40oC to +125oC temperature rating. The low thermal resistance of the thermally enhanced DFN package allows greater power dissipation capability for driving heavier capacitive or resistive loads. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. The devices are fully latch-up protected when tested according to JEDEC JESD78A. All terminals are fully protected against Electrostatic Discharge (ESD), up to 4 kV (HBM) or 400V (MM). 3.0A Dual High-Speed Power MOSFET Driver With Enable |
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