| 전자부품 데이터시트 검색엔진 |
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STL70N4LLF5 데이터시트(PDF) 5 Page - STMicroelectronics |
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STL70N4LLF5 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STL70N4LLF5 Electrical characteristics 5/10 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 9A, RG=4.7 Ω, VGS=10 V (see Figure 2) TBD TBD TBD TBD ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 18 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 72 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 18A, VGS=0 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, di/dt = 100 A/µs, VDD= 25 V TBD TBD TBD ns nC A |
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