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SST25VF080B 데이터시트(PDF) 23 Page - Microchip Technology |
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SST25VF080B 데이터시트(HTML) 23 Page - Microchip Technology |
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23 / 36 page ![]() ©2011 Silicon Storage Technology, Inc. S71296-05-000 02/11 23 8 Mbit SPI Serial Flash SST25VF080B Data Sheet A Microchip Technology Company Electrical Specifications Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con- ditions may affect device reliability.) Temperature Under Bias .............................................. -55°C to +125°C Storage Temperature................................................. -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential ............................. -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential .................. -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25°C)................................... 1.0W Surface Mount Solder Reflow Temperature ........................... 260°C for 10 seconds Output Short Circuit Current1................................................... 50 mA 1. Output shorted for no more than one second. No more than one output shorted at a time. Table 8: Operating Range Range Ambient Temp VDD Commercial 0°C to +70°C 2.7-3.6V Industrial -40°C to +85°C 2.7-3.6V T8.1 1296 Table 9: AC Conditions of Test1 1. See Figures 26 and 27 Input Rise/Fall Time Output Load 5ns CL =30pF T9.1 1296 Table 10:DC Operating Characteristics (SST25VF080B-50-xx-xxxx) Symbol Parameter Limits Test Conditions Min Max Units IDDR Read Current 10 mA CE#=0.1 VDD/0.9 VDD@25 MHz, SO=open IDDR2 Read Current 15 mA CE#=0.1 VDD/0.9 VDD@50 MHz, SO=open IDDW Program and Erase Current 30 mA CE#=VDD ISB Standby Current 20 µA CE#=VDD,VIN=VDD or VSS ILI Input Leakage Current 1 µA VIN=GND to VDD,VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD,VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7 VDD VVDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOL2 Output Low Voltage 0.4 V IOL=1.6 mA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T10.0 1296 |
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