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SST25VF032B 데이터시트(PDF) 23 Page - Microchip Technology |
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SST25VF032B 데이터시트(HTML) 23 Page - Microchip Technology |
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23 / 31 page ![]() ©2011 Silicon Storage Technology, Inc. S71327-04-000 02/11 23 32 Mbit SPI Serial Flash SST25VF032B Data Sheet A Microchip Technology Company Table 11:Recommended System Power-up Timings Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 100 µs TPU-WRITE1 VDD Min to Write Operation 100 µs T11.0 1327 Table 12:Capacitance (TA = 25°C,f=1 Mhz, other pins open) Parameter Description Test Condition Maximum COUT1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Output Pin Capacitance VOUT =0V 12pF CIN1 Input Capacitance VIN =0V 6 pF T12.0 1327 Table 13:Reliability Characteristics Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T13.0 1327 |
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