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LE28C1001M 데이터시트(PDF) 7 Page - Sanyo Semicon Device

부품명 LE28C1001M
상세설명  1MEG (131072 words x 8 bits) Flash Memory
PDF  14 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE28C1001M 데이터시트(HTML) 7 Page - Sanyo Semicon Device

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AC Electrical Characteristics at Ta = 0 to +70°C, VCC = 5 V ± 10%
AC Testing Conditions (See Figure 9)
Input rise and fall times: ................10 ns (max.)
Output load: ....................................1 TTL gate + 100 pF
Read Cycle
Page Write Cycle
Note: * typ is a reference value at VCC = 5.0, Ta = 25 °C.
Figure 1 Read Cycle
No. 5129-7/14
LE28C1001M, T-90/12/15
Parameter
Symbol
min
typ*
max
Unit
Write cycle time (erase and program)
tWC
5
10
ms
Address setup time
tAS
0
ns
Address hold time
tAH
50
ns
CE setup time
tCS
0
ns
CE hold time
tCH
0
ns
OE setup time
tOES
0
ns
OE hold time
tOEH
0
ns
CE pulse width
tCP
70
ns
WE pulse width
tWP
70
ns
Data setup time
tDS
45
ns
Data hold time
tDH
0
ns
Byte load cycle time
tBLC
0.05
100
µs
Byte load timeout time
tBLCO
200
µs
LE28C1001M, T
Parameter
Symbol
-90
-12
-15
Unit
min
max
min
max
min
max
Read cycle time
tRC
90
120
150
ns
CE access time
tCE
90
120
150
ns
Address access time
tAA
90
120
150
ns
OE access time
tOE
50
60
70
ns
Output low-impedance time from CE
tCLZ
0
0
0
ns
Output low-impedance time from OE
tOLZ
0
0
0
ns
Output high-impedance time from CE
tCHZ
40
40
40
ns
Output high-impedance time from OE
tOHZ
40
40
40
ns
Output valid time from address input
tOH
0
0
0
ns
A05761



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