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MIC4225 데이터시트(PDF) 11 Page - MIC GROUP RECTIFIERS

부품명 MIC4225
상세설명  Dual 4A, 4.5V to 18V, 15ns Switch Time, Low-Side MOSFET Drivers with Enable
PDF  20 Pages
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제조업체  MIC [MIC GROUP RECTIFIERS]
홈페이지  http://www.cnmic.com
Logo MIC - MIC GROUP RECTIFIERS

MIC4225 데이터시트(HTML) 11 Page - MIC GROUP RECTIFIERS

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Micrel, Inc.
MIC4223/MIC4224/MIC4225
June 2009
11
M9999-061109-A
(408) 944-0800
Quiescent Current Power Dissipation
Quiescent current powers the internal logic, level shifting
circuitry and bias for the output drivers. This current is
proportional to operating frequency and VDD voltage. The
typical characteristic graphs show how supply current
varies with switching frequency and supply voltage.
The power dissipated by the driver’s quiescent current is:
DD
DD
quiescent
I
V
Pdiss
×
=
Total Power Dissipation and Thermal Considerations
Total
package
power
dissipation
equals
the power
dissipation of each driver caused by driving the external
MOSFETs plus the supply current.
B
A
quiescent
TOTAL
Pdriver
Pdriver
Pdiss
Pdiss
+
+
=
The die temperature may be calculated once the total
power dissipation is known.
JA
TOTAL
A
J
Pdiss
T
T
θ
×
+
=
Where:
TA is the Maximum ambient temperature
TJ is the junction temperature (°C)
PdissTOTAL is the power dissipation of the Driver
θ
JA
is the thermal resistance from junction-to-
ambient air (°C/W)
The following graphs help determine the maximum gate
charge that can be driven with respect to switching
frequency, supply voltage and ambient temperature.
Figure 5a shows the power dissipation in the driver for
different values of gate charge with VDD = 5V. Figure 5b
shows the power dissipation at VDD = 12V. Figure 5c show
the maximum power dissipation for a given ambient
temperature for the SOIC and ePAD MSOP packages.
The maximum operating frequency of the driver may be
limited by the maximum power dissipation of the driver
package.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100k
1M
FREQUENCY (Hz)
10M
PDISS: GATE Charge
vs. Frequency
VDD=5V
10nC
20nC
30nC
40nC
50nC
Figure 5a. PDISS vs. QG and fS for VDD = 5V
100k
1M
FREQUENCY (Hz)
10M
PDISS: GATE Charge
vs. Frequency
1.4
1.6
1.8
2.0
1.2
1.0
0.8
0.6
0.4
0.2
0
VDD=12V
10nC
20nC
30nC
40nC
50nC
Figure 5b. PDISS vs. QG and fS for VDD = 12V
Maximum Power
Dissipation
0.0
0.5
1.0
1.5
2.0
20
40
60
80
100
120
140
Ambient Temperature (°C)
Figure 5c. Maximum PDISS vs. Ambient Temperature



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