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2N80G-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 2N80G-TN3-R
상세설명  2 Amps, 800 Volts N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N80G-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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2N80
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-480.a
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNI
T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
800
V
Breakdown Voltage Temperature
Coefficient
△
BVDSS/△TJ Reference to 25°C, ID=250µA
0.9
V/°C
VDS=800V, VGS=0V
10
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
100
µA
Forward
VGS=+30V, VDS=0V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.2A
4.9
6.3
Ω
Forward Transconductance (Note 4)
gFS
VDS=50V, ID=1.2A
2.65
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
425 550
pF
Output Capacitance
COSS
45
60
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
5.5
7.0
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 4,5)
QG
12
15
nC
Gate to Source Charge (Note 4,5)
QGS
2.6
nC
Gate to Drain Charge (Note 4,5)
QGD
VGS=10V, VDS=640V, ID=2.4A
6.0
nC
Turn-ON Delay Time (Note 4,5)
tD(ON)
12
35
ns
Rise Time (Note 4,5)
tR
30
70
ns
Turn-OFF Delay Time (Note 4,5)
tD(OFF)
25
60
ns
Fall-Time (Note 4,5)
tF
VDD=400V, ID=2.4A, RG=25Ω
28
65
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
9.6
A
Drain-Source Diode Forward Voltage
VSD
IS=2.4A, VGS=0V
1.4
V
Reverse Recovery Time (Note 4)
tRR
480
ns
Reverse Recovery Charge (Note 4)
QRR
IS=2.4A, VGS=0V, dIF/dt=100A/µs
2.0
µC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature



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