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2N90G-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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2N90G-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-478.a 2 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N90 is universally applied in high efficiency switch mode power supply. FEATURES * 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V * Typically 5.5 pF low Crss * High switching speed * Typically 12 nC low gate charge * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2N90L-TF3-T 2N90G-TF3-T TO-220F G D S Tube 2N90L-TN3-R 2N90G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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