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2N7002TG-AN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2N7002TG-AN3-R
상세설명  300 mAmps, 60 Volts N-CHANNEL POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N7002TG-AN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2N7002T
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-542.a
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Continuous
±20
Gate Source Voltage
Non Repetitive(tp<50
μs)
VGSS
±40
V
Continuous
300
Drain Current
Pulsed
ID
800
mA
Power Dissipation
Derated Above 25
°C
PD
200
1.6
mW
mW/
°C
Junction Temperature
TJ
+ 150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625 (Note1)
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10μA
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS =0V
1
μA
IGSSF
VGS =20V, VDS=0V
100
nA
Gate-Source Leakage Current
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID=250μA
1
2.1
2.5
V
VGS = 10V, ID=500mA
0.6
3.75
Drain-Source On-Voltage
VDS (ON)
VGS = 5.0V, ID=50mA
0.09
1.5
V
On-State Drain Current
ID(ON)
VGS=10V,VDS≥2VDS(ON)
500
2700
mA
VGS=10V, ID=500mA,TJ=125°C
13.5
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS =5.0V, ID=50mA
7.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
20
50
pF
Output Capacitance
COSS
11
25
pF
Reverse Transfer Capacitance
CRSS
4
5
pF
Turn-On Time
tON
VDD=30V, RL=150Ω
ID=200mA, VGS =10V
RGEN =25Ω
20
nS
Turn-Off Time
tOFF
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
RGEN =25Ω
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=115mA (Note )
0.88
1.5
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
0.8
A
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%



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