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2SA684G-x-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SA684G-x-AB3-R
상세설명  PNP SILICON TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA684G-x-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2SA684
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R211-006.C
ABSOLUTE MAXIMUM RATINGS ( Ta=25℃ ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Peak Collector Current
ICP
-1.5
A
Collector Current (DC)
IC
-1
A
SOT-89
500
mW
Collector Dissipation
TO-92NL
PC
1000
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-10μA, IE=0
-60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-2mA, IB=0
-50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-10μA, IC =0
-5
V
Collector Cut-Off Current
ICBO
VCB=-20V, IE=0
-0.1
μA
hFE1
VCE=-10V, IC=-500mA
85
340
DC Current Gain
hFE2
VCE=-5V, IC=-1A
50
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-0.5A, IB=-50mA
-0.2
-0.4
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=-0.5A, IB=-50mA
-0.85
-1.2
V
Current Gain Bandwidth Product
fT
VCE=-10V, IB=50mA, f=200MHz
200
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
20
30
pF
CLASSIFICATION OF hFE1
RANK
Q
R
S
RANGE
85-170
120-240
170-340



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