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2SB776 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SB776
상세설명  MEDIUM POWER LOW VOLTAGE TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB776 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SB776 Datasheet HTML 1Page - Unisonic Technologies 2SB776 Datasheet HTML 2Page - Unisonic Technologies 2SB776 Datasheet HTML 3Page - Unisonic Technologies 2SB776 Datasheet HTML 4Page - Unisonic Technologies  
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2SB776
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-003.C
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
DC
-3
A
Collector Current
PULSE
IC
-7
A
Base Current
IB
-0.6
A
TO-126
10
W
Collector Dissipation (TC=25°C)
TO-252
PC
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB=-50V, IE=0
-1000
nA
Emitter Cut-Off Current
IEBO
VEB=-3V, Ic=0
-1000
nA
hFE1
VCE=-2V, Ic=-20mA
100
200
DC Current Gain (Note)
hFE2
VCE=-2V, Ic=-1A
100
150
400
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=-2A, IB=-0.2A
-0.3
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
Ic=-2A, IB=-0.2A
-1.0
-2.0
V
Current Gain Bandwidth Product
fT
VCE=-5V, Ic=-0.1A
80
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
45
pF
Note: Pulse test: PW<300
μs, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400



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