2SB1198

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-040,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-80

V

Collector-Emitter Voltage

-80

V

Emitter-Base Voltage

-5

V

Collector Current

-0.5

A

Collector Power Dissipation

0.2

W

Junction Temperature

150

℃

Storage Temperature

-40 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range

and assured by design from –20℃~85℃.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

-80

V

Collector Emitter Breakdown Voltage

-80

V

Emitter Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-0.5

μA

Emitter Cut-Off Current

-0.5

μA

Collector-Emitter Saturation Voltage

-0.2

-0.5

V

DC Current Transfer Ratio

120

390

Transition Frequency

180

MHz

Output Capacitance

11

pF

RANK

Q

R

RANGE

120-270

180-390

MARKING

AKQ

AKR