2SC3355

NPN SILICON EPITAXIAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-036.Ba

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

20

V

Collector-emitter voltage

12

V

Emitter-base voltage

3

V

Collector current

100

mA

Total power dissipation

600

mW

Junction Temperature

125

℃

Operating Temperature

-20 ~ +85

℃

Storage Temperature

-40 ~ +150

℃

Note

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature

range and assured by design from –20℃~85℃.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

1.0

µA

Emitter Cutoff Current

1.0

µA

DC Current Gain

50

300

Gain bandwidth Product

7

GHz

Feed-Back Capacitance

1.0

pF

Noise Figure

NF

1.1

dB

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.