| 전자부품 데이터시트 검색엔진 |
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2SC4242 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2SC4242 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 2SC4242 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R203-033.A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 450 V Emitter-Base Voltage VEBO 8.0 V Continuous IC 7.0 Collector Current Peak ICM 14 A Base Current IB 2.0 A 40 W Total Power Dissipation @TC=25℃ Derate Above 25℃ PD 0.32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction -Case θJC 4 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage BVCEO ICEO=100mA, IB=0 400 V Collector-Base Breakdown Voltage BVCBO ICBO=1.0mA, IE=0 450 V Emitter-Base Breakdown Voltage BVEBO IEBO=1.0mA, IC=0 8.0 V Collector Cutoff Current ICBO VCBO=450V, IE=0 100 µA Emitter Cutoff Current IEBO VEBO=8.0V, IC=0 100 µA ON CHARACTERISTICS DC Current Gain hFE IC=4.0A, VCE=5.0V 10 Collector-Emitter Saturation Voltage VCE (SAT) IC=4.0A, IB=800mA 0.8 V Base-Emitter Saturation Voltage VBE (SAT) IC=4.0A, IB=800mA 1.2 V SWITCHING CHARACTERISTICS On Time tON 1.0 µs Storage Time tS 2.5 µs Fall Time tF VCC=150V, IC=5.0A IB1= -IB2=1.0A, RL=30Ω 0.5 µs Note: Pulse Test: Pulse Width=300µs, Duty Cycle ≤ 2.0% |
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