2SC3838

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R220-018,Ca

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

20

V

Collector-Emitter Voltage

11

V

Emitter-Base Voltage

3

V

Collector current

50

mA

Collector power dissipation

0.2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-base breakdown voltage

20

V

Collector-emitter breakdown voltage

11

V

Emitter-base breakdown voltage

3

V

Collector cutoff current

0.5

μA

Emitter cutoff current

0.5

μA

Collector-emitter saturation voltage

0.5

V

DC current transfer ratio

56

400

Transition frequency

1.4

3.2

GHz

Output capacitance

Cob

0.8

1.5

pF

Collector-base time constant

4

12

ps

Noise factor

NF

3.5

dB

RANK

A

B

C

D

RANGE

56 ~ 110

100 ~ 170

120 ~ 270

250 ~ 400

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.