2SC4617

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R206-081.D

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

7

V

Collector Current

0.15

A

SOT-523

150

mW

Collector Power Dissipation

SOT-23/SOT-323

200

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

60

V

Collector Emitter Breakdown Voltage

50

V

Emitter-base Breakdown Voltage

7

V

Collector Cut-Off Current

0.1

μA

Emitter Cut-Off Current

0.1

μA

DC Current Gain

120

560

Collector-Emitter Saturation Voltage

0.4

V

Transition Frequency

180

MHz

Output Capacitance

2

3.5

pF

RANK

Q

R

S

RANGE

120 ~ 270

180 ~ 390

270 ~ 560