UTC2SD879

NPN EPITAXIAL SILICON TRANSISTOR

1

QW-R201-043,A

1.5V, 3V STROBE APPLICATIONS

DESCRIPTION

The UTC 2SD879 is a NPN epitaxial silicon transistor,

designed for 1.5V and 3V strobe applications.

FEATURES

*In applications where two NiCd batteries are used to

provide 2.4V, two 2SD879s are used.

*The charge time is approximately 1 second faster than

that of germanium transistors.

*Less power dissipation because of lwo

flashes of light to be emitted.

*Large current capacity and highly resistant to break-down.

*Excellent linearity of hFE in the region from low current to

high current.

TO-92

1

1:EMITTER 2:COLLECTOR 3:BASE

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

20

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

6

V

Collector Dissipation

1

W

Collector Current(DC)

Ic

3

A

Collector Current(PULSE)

Icp

5

A

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: PULSE CONDITION -> 100 ms single pulse

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

20

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

6

V

Base-Emitter Voltage

0.83

1.5

V

Collector Cut-Off Current

1

µA

Emitter Cut-Off Current

1

µA

DC Current Gain

140

210

400

Collector-Emitter Saturation Voltage

0.3

0.4

V

Current Gain Bandwidth Product

200

MHz

Output Capacitance

Cob

30

pF

Pulse: 1mS