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2SD1628 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SD1628
상세설명  HIGH-CURRENT SWITCHING APPLICATIONS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1628 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SD1628 Datasheet HTML 1Page - Unisonic Technologies 2SD1628 Datasheet HTML 2Page - Unisonic Technologies 2SD1628 Datasheet HTML 3Page - Unisonic Technologies  
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2SD1628
Preliminary
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-045.a
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
DC
IC
5
A
Collector Current
Pulse
ICP
8
A
Collector Dissipation
PC
0.5
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Saturation Voltage
VCE(SAT) IC =3A, IB =60mA
500
mV
Base-Emitter Saturation Voltage
VBE(SAT) IC =3A, IB =60mA
1.5
V
Collector Cut-Off Current
ICBO
VCB =50V, IE =0
100
nA
Emitter Cut-Off Current
IEBO
VEB =5V, IC =0
100
nA
hFE1
VCE =2V, IC =0.5A
120
560
DC Current Gain
hFE2
VCE =2V, IC =3A
95
Output Capacitance
Cob
VCB =10V, f =1MHz
45
pF
Transition Frequency
fT
VCE =10V, IC =50mA
120
MHz
Turn On Time
tON
30
ns
Storage Time
tS
300
ns
Fall Time
tF
See specified Test circuit
40
ns
■
CLASSIFICATION OF hFE1
RANK
E
F
G
RANGE
120 ~ 200
160 ~ 320
280 ~ 560



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