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2SD1691 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SD1691
상세설명  LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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2SD1691 데이터시트(HTML) 2 Page - Unisonic Technologies

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2SD1691
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-015,C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
DC
Ic
5
Collector Current
Pulse (PW 10ms,Duty Cycle 50%
≦≦
)
Icp
8
A
Base Current
IB
1
A
TO-126/ TO-126C
20
TO-220F1
23
Collector Power Dissipation (Tc=25°C)
TO-220
Pc
54
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified )
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Cut-off Current
ICBO
VCB=50V,IE=0
10
μA
Emitter Cut-off Current
IEBO
VEB=7V,Ic=0
10
μA
hFE1
VCE=1V,Ic=0.1A
60
hFE2
VCE=1V,Ic=2A
160
400
DC Current Gain
hFE3
VCE=2V,Ic=5A
50
Collector-Emitter Saturation Voltage
VCE(SAT) (Note) Ic=2A,IB=0.2A
0.1
0.3
V
Base-Emitter Saturation Voltage
VBE(SAT) (Note) Ic=2A,IB=0.2A
0.9
1.2
V
Turn On Time
TON
0.2
1
Storage Time
TSTG
1.1
2.5
Switching Time
Fall Time
TF
20μsec
IB1
IB2
IB1=-IB2=0.2A
DUTY CYCLE≦1%
INPUT
IB1
IB2
OUTPUT
Vcc=10V
5Ω
Ω
0.2
1
μs
Note: Pulse test: PW 50
≦
μS, Duty Cycle 2% Pulse
≦
CLASSIFICATION OF hFE2
RANK
O
Y
RANGE
160-320
200-400



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