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2SK2751-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2SK2751-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 2SK2751 N-CHANNEL JFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-067.C ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Gate-Drain Voltage VGDS -40 V Drain Current ID 10 mA Gate Current IG 2 mA Allowable Power Dissipation PD 200 mW Channel Temperature TCH +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25±3℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate-Drain Voltage VGDS IG=-100µA, VDS=0 -40 V Gate-Source Cut-Off Voltage VGSC VDS=10V, ID=1µA -3.5 V Drain-Source Cut-Off Current IDSS VDS=10V, VGS=0 1.4 4.7 mA Gate-Source Leakage Current IGSS VGS=-20V, VDS=0 -1 nA Forward Transfer Admittance | Yfs | VDS=10V, VGS=0, f=1kHz 2.5 mS Input Capacitance (Common Source) CISS 5 pF Output Capacitance (Common Source) COSS 1 pF Reverse Transfer Capacitance (Common Source) CRSS VDS=10V, VGS=0, f=1MHz 1 pF |
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