3LN01M-AL3-R datasheet(1/3 Pages) UTC

부품명	3LN01M-AL3-R

상세설명	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

3LN01M

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.a

N CHANNEL SILICON

MOSFET GENERAL-PURPOSE

SWITCHING DEVICE

APPLICATIONS

DESCRIPTION

The 3LN01M uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device’s general purpose is for switching device

applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

Lead-free:

3LN01ML

Halogen-free: 3LN01MG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen-Free

Package

1

2

3

Packing

3LN01M-AL3-R

3LN01ML-AL3-R

3LN01MG-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

유사한 부품 번호 - 3LN01M-AL3-R

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	3LN01M-TL-E	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1
ON Semiconductor	3LN01M-TL-H	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1

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3LN01M-AL3-R 데이터시트(PDF) 1 Page - Unisonic Technologies

3LN01M-AL3-R 데이터시트(HTML) 1 Page - Unisonic Technologies

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