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5N50G-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 5N50G-TN3-R
상세설명  500V N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

5N50G-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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5N50
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-476.b
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
V
Breakdown Voltage Temperature
Coefficient
△
BVDSS/△TJ Reference to 25°C, ID=250µA
0.5
V/°C
VDS=500V, VGS=0V
1
Drain-Source Leakage Current
IDSS
VDS=400V, TC=125°C
10
µA
Forward
VGS=30V, VDS=0V
100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
1.14
1.4
Ω
Forward Transconductance (Note 4)
gFS
VDS=40V, ID=2.5A
5.2
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
480
625
pF
Output Capacitance
COSS
80
105
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
15
20
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 4,5)
QG
18
24
nC
Gate to Source Charge (Note 4,5)
QGS
2.2
nC
Gate to Drain Charge (Note 4,5)
QGD
VGS=10V, VDS=400V, ID=5A
9.7
nC
Turn-ON Delay Time (Note 4,5)
tD(ON)
12
35
ns
Rise Time (Note 4,5)
tR
46
100
ns
Turn-OFF Delay Time (Note 4,5)
tD(OFF)
50
110
ns
Fall-Time (Note 4,5)
tF
VDD=250V, ID=5A, RG=25Ω
48
105
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
5
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Drain-Source Diode Forward Voltage
VSD
IS=5A, VGS=0V
1.4
V
Reverse Recovery Time (Note 4)
tRR
263
ns
Reverse Recovery Charge (Note 4)
QRR
IS=5A, VGS=0V, dIF/dt=100A/µs
1.9
µC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature



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