전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

6N10G-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 6N10G-TN3-R
상세설명  6 Amps, 100 Volts N-CHANNEL POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N10G-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  6N10G-TN3-R Datasheet HTML 1Page - Unisonic Technologies 6N10G-TN3-R Datasheet HTML 2Page - Unisonic Technologies 6N10G-TN3-R Datasheet HTML 3Page - Unisonic Technologies 6N10G-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
6N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-486.a
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
VDS=80V, VGS=0V
1
VDS=80V, VGS=0V, TJ=125°C
50
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V, TJ=175°C
250
µA
Forward
VGS=+20V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
On-State Drain Current (Note 2)
ID(on)
VDS=5V, VGS=10V
8.0
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
VGS=10V, ID=3A
0.160 0.200
VGS=10V, ID=3A, TJ=125°C
0.350
VGS=10V, ID=3A, TJ=175°C
0.450
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=4.5, ID=1.0A
0.180 0.225
Ω
Forward Transconductance (Note 2)
gFS
VDS=15V, ID=3A
8.5
S
DYNAMIC PARAMETERS
(Note1)
Input Capacitance
CISS
240
pF
Output Capacitance
COSS
42
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
17
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
QG
2.7
4.0
nC
Gate to Source Charge (Note 3)
QGS
0.6
nC
Gate to Drain Charge (Note 3)
QGD
VDS=50V, VGS=5V, ID=6.5A
0.7
nC
Turn-ON Delay Time (Note3)
tD(ON)
7
11
ns
Rise Time (Note 3)
tR
8
12
ns
Turn-OFF Delay Time (Note 3)
tD(OFF)
8
12
ns
Fall-Time (Note 3)
tF
VDD=50V, RL=7.5Ω, ID≈6.5A,
VGEN=10V, RG=2.5 Ω
9
14
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(TC=25°C)
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
8.0
A
Drain-Source Diode Forward Voltage (Note 2)
VSD
IF=6.5A, VGS=0V
0.9
1.3
V
Reverse Recovery Time
tRR
IF=6.5A, di/dt=100A/µs
35
60
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse test; pulse width ≤300 ≤μs, duty cycle ≤2%.
3. Independent of operating temperature.



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com