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7N60ZL-X-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 7N60ZL-X-TQ2-R
상세설명  7.4 Amps, 600/650 Volts N-CHANNEL MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

7N60ZL-X-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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7N60Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-349.B
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
7N60Z-A
600
V
Drain-Source Voltage
7N60Z-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
Continuous Drain Current
ID
7.4
A
Pulsed Drain Current (Note 1)
IDM
29.6
A
Single Pulsed (Note 3)
EAS
600
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-263
142
W
Power Dissipation
TO-220F/TO-220F1
PD
48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-220/ TO-263
θJA
62.5
°C/W
Junction to Case
TO-220/ TO-263
θJC
0.88
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60Z-A
600
V
Drain-Source Breakdown Voltage
7N60Z-B
BVDSS
VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
1
μA
Forward
VGS = 30V, VDS = 0V
10
μA
Gate- Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-10
μA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID = 250μA,
Referenced to 25°C
0.67
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
1
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1400
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
16
21
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
70
ns
Turn-On Rise Time
tR
170
ns
Turn-Off Delay Time
tD(OFF)
140
ns
Turn-Off Fall Time
tF
VDD =300V, ID =7.4A, RG =25Ω
(Note 1, 2)
130
ns
Total Gate Charge
QG
29
38
nC
Gate-Source Charge
QGS
7
nC
Gate-Drain Charge
QGD
VDS=480V, ID=7.4A, VGS=10 V
(Note 1, 2)
14.5
nC



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