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25N10L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 25N10L-TN3-R
상세설명  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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25N10L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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25N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-448.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
100
V
Gate Source Voltage
VGSS
±20
V
TC =25°C
ID
23
A
Continuous Drain Current (VGS=10V)
TC = 100°C
ID
14.6
A
Pulsed Drain Current (Note 2)
IDM
80
A
Total Power Dissipation (TC =25°C)
PD
41
W
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by max. junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
3
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =1mA
100
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ Reference to 25°C , ID =1mA
0.14
V/°C
VDS =100V, VGS =0V, TJ=25°C
25
µA
Drain-Source Leakage Current
IDSS
VDS =80V, VGS =0V,TJ =150°C
100
µA
Gate-Source Leakage Current
IGSS
VGS =±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
2
4
V
Static Drain-Source On-Resistance (Note)
RDS(ON)
VGS =10V, ID =16A
80
mΩ
Forward Transconductance
gFS
VDS =10V, ID =16A
14
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1060 1700
pF
Output Capacitance
COSS
270
pF
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS=0V, f=1.0MHz
8
pF
Gate Resistance
RG
f=1.0MHz
1.5
2.3
Ω
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
19
30
nC
Gate Source Charge
QGS
5
nC
Gate Drain Charge
QGD
VGS=10V, VDS=80V, ID=16A
6
nC
Turn-ON Delay Time
1
tD(ON)
10
ns
Turn-ON Rise Time
tR
28
ns
Turn-OFF Delay Time
tD(OFF)
17
ns
Turn-OFF Fall-Time
tF
VDD=50V, ID=16A, RG=3.3Ω,
VGS=10V, RD=3.125Ω
2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS =16A, VGS =0V
1.3
V
Reverse Recovery Time
tRR
90
ns
Reverse Recovery Charge
QRR
IS
=16A,VGS
=0V,
dI/dt=100A/µs
380
nC
Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%



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