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70N06L-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 70N06L-TQ2-R
상세설명  70 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

70N06L-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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70N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-089.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
70
A
Continuous Drain Current
TC = 100°C
ID
56
A
Drain Current Pulsed (Note 2)
IDM
280
A
Single Pulsed (Note 3)
EAS
600
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
10
V/ns
Power Dissipation
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repeativity rating: pulse width limited by junction temperature
L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C
ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
θJC
1.2
°C/W
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
1
μA
Forward
VGS = 20V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -20V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 1mA, Referenced to 25°C
0.08
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 35 A
12
15
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
3300
pF
Output Capacitance
COSS
530
pF
Reverse Transfer Capacitance
CRSS
VGS = 0 V, VDS = 25 V
f = 1MHz
80
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
12
ns
Turn-On Rise Time
tR
79
ns
Turn-Off Delay Time
tD(OFF)
80
ns
Turn-Off Fall Time
tF
VDD = 30V, VGS=10V,ID =70 A
(Note 1, 2)
52
ns
Total Gate Charge
QG
90
140
nC
Gate-Source Charge
QGS
20
35
nC
Gate-Drain Charge (Miller Charge)
QGD
VDS = 60V, VGS = 10 V,
ID = 48A (Note 1, 2)
30
45
nC



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