5302DG-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

5302D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R213-018. D

ELECTRICAL CHARACTERISTICS (Ta = 25°С, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

BVCEO

IC=10mA, IE=0 (Note)

400

Collector-Base Breakdown Voltage

BVCBO

IC=1mA, IB=0

800

Emitter-Base Breakdown Voltage

BVEBO

IE=1mA, IC=0

Collector Cutoff Current

ICBO

VCB=800V, IE=0

μA

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

μA

ON CHARACTERISTICS

hFE1

VCE=5V, IC=10mA

hFE2

VCE=5V, IC=400mA

DC Current Gain

hFE3

VCE=5V, IC=1A

VCE(SAT1) IC=0.5A, IB=0.1A (Note)

0.5

Collector-Emitter Saturation Voltage

VCE(SAT2) IC=1A, IB=0.25A (Note)

1.1

1.5

VBE(SAT1) IC=0.5A, IB=0.1A (Note)

1.1

Base-Emitter Saturation Voltage

VBE(SAT2) IC=1A, IB=0.25A (Note)

1.2

SWITCHING CHARACTERISTICS

Turn On Time

tON

0.15

0.3

μS

Fall Time

0.2

0.4

μS

Storage Time

tSTG

VCC=250V, IC=1A,

IB1=IB2=0.2A, tP=25uS

Duty Cycle<1%

0.5

0.9

μS

Diode

Forward Voltage Drop

IC=1A

1.4

Fall Time

IC=1A

800

μS

Note: Pulsed duration = 300μS, Duty cycle≤2%

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