BCP69L-XX-AA3-R datasheet(2/3 Pages) UTC

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BCP69

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R207-009.D

ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage (Open Emitter)

VCBO

-32

Collector-Emitter Voltage (Open Base)

VCEO

-20

Emitter-Base Voltage (Open Collector)

VEBO

-5

Collector Current (DC)

-1

Peak Collector Current

ICM

-2

Peak Base Current

IBM

-200

Total Power Dissipation, Ta ≤25°C

1.35

Junction Temperature

150

°C

Operating Temperature

TOPR

-45 ~ +150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

K/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Saturation Voltage

VCE(SAT) IC = -1A, IB = -100mA

-500

IC = -5mA, VCE = -10V

-620

Base-Emitter Voltage

VBE

IC = -1A, VCE = -1V

-1

IE = 0, VCB = -25V

-100

Collector Cut-off Current

ICBO

IE = 0, VCB = -25V, TJ = 150°C

-10

µA

Emitter Cut-off Current

IEBO

IC = 0, VEB = -5V

-100

IC = -5mA, VCE = -10V

IC = -500mA, VCE = -1V

375

DC Current Gain

hFE

IC = -1A, VCE = -1V

Collector Capacitance

IE = ie = 0, VCB = -5V, f = 1MHz

Transition Frequency

IC = -10mA, VCE = -5V, f = 100MHz

MHz

DC current gain ratio of the

complementary pairs

FE2

FE1

|IC| = 0.5A, |VCE| = 1V

1.6

CLASSIFICATION OF hFE

RANK

RANGE

100~250

160~375

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