BT151G-6-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

BT151

SCR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R301-017,C

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

BT151-5

500 (Note 1)

BT151-6

650 (Note 1)

Repetitive Peak Off-State Voltages

BT151-8

VDRM, VRRM

800

Average On-State Current (half sine wave; Tmb ≤109°C)

IT(AV)

7.5

RMS on-State Current (all conduction angles)

IT(RMS)

t = 10 ms

100

Non-Repetitive Peak On-State Current

(half sine wave; TJ = 25 °C prior to surge)

t = 8.3 ms

ITSM

110

2t for Fusing (t = 10 ms)

Repetitive Rate of Rise of On-State Current After Triggering

(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs)

dIT /dt

A/μs

Peak Gate Current

IGM

Peak Gate Voltage

VGM

Peak Reverse Gate Voltage

VRGM

Peak Gate Power

PGM

Average Gate Power (Over any 20 ms period)

PG(AV)

0.5

Storage Temperature

Tstg

-40 ~150

°C

Operating Junction Temperature

125

°C

Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor

may switch to the on-state. The rate of rise of current should not exceed 15A/

μs.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Mounting Base

θJMb

1.3

K/W

Junction to Ambient

θJA

K/W

STATIC CHARACTERISTICS (TJ=25℃,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Gate Trigger Current

IGT

VD = 12 V, IT = 0.1 A

Latching Current

VD = 12 V, IGT = 0.1 A

Holding Current

VD = 12 V, IGT = 0.1 A

On-State Voltage

IT = 23 A

1.4

1.75

Gate Trigger Voltage

VGT

VD = 12 V, IT = 0.1 A

VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C

0.25

0.6

0.4

1.5

Off-State Leakage Current

ID , IR

VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C

0.1

0.5

DYNAMIC CHARACTERISTICS(TJ=25℃,unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX UNIT

Gate open circuit

130

Critical Rate of Rise of

Off-State Voltage

dVD /dt

VDM = 67% VDRM(max),

TJ = 125 °C,

exponential waveform; RGK = 100Ω

200

1000

V/μs

Gate Controlled Turn-on

Time

tGT

ITM = 40 A, VD = VDRM(max), IG = 0.1 A,

dIG /dt = 5 A/μs

μs

Circuit Commutated

Turn-off tIme

VD = 67% VDRM(max), TJ = 125°C;

ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs,

dVD /dt = 50 V/μs, RGK = 100 Ω

μs

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