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MASWSS0117 데이터시트(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

부품명 MASWSS0117
상세설명  GaAs SPDT 2.7 V High Power Switch
PDF  3 Pages
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제조업체  MA-COM [M/A-COM Technology Solutions, Inc.]
홈페이지  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASWSS0117 데이터시트(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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GaAs SPDT 2.7 V High Power Switch
DC - 3.0 GHz
Rev. V3
MASWSS0117
1
•
North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
•
India Tel: +91.80.43537383
•
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• Low Voltage Operation: 2.7 V
• High IP3: +56 dBm
• Low Insertion Loss: 0.30 dB at 1 GHz
• High Isolation: 25 dB at 1 GHz
• SC70 6-Lead Package
• 0.5 micron GaAs PHEMT Process
Description
The MASWSS0117 is a GaAs pHEMT MMIC single
pole double throw (SPDT) high power switch in a low
cost SC70 6-lead package. The MASWSS0117 is
ideally suited for applications where high power, low
control voltage, low insertion loss, high isolation,
small size and low cost are required.
Typical applications are for CDMA handset systems
that connect separate transceiver and/or GPS
functions to a common antenna, as well as other
related handset and general purpose applications.
The MASWSS0117 can be used in all systems
operating up to 3.0 GHz requiring high power at low
control voltage.
The MASWSS0117 is fabricated using a 0.5 micron
gate length GaAs pHEMT process.
The process
features
full
passivation
for
performance
and
reliability.
Functional Block Diagram
Pin Configuration
Pin No.
Pin Name
Description
1
V2
Vcontrol 2
2
RFC
RF Common
3
V1
Vcontrol 1
4
RF1
RF Port 1
5
GND
RF Ground
6
RF2
RF Port 2
Ordering Information1
Part Number
Package
MASWSS0117
Bulk Packaging
MASWSS0117TR
1000 piece reel
MASWSS0117TR-3000
3000 piece reel
MASWSS0117SMB
Sample Test Board
1. Reference Application Note M513 for reel size information.
MASWSS0117 orientation in tape
MASWSS0117 Device Marking


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