IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 44N50Q

IXFN 48N50Q

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

V

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

20

40

60

80

100 120 140 160 180 200

Q

Fig. 7. Input Adm ittance

0

6

12

18

24

30

36

42

48

54

60

3.5

4

4.5

5

5.5

6

6.5

V

25ºC

-40ºC

Fig. 12. Maxim um Transient Therm al

Resistance

0.01

0.1

1

1

10

100

1000

Pulse Width - milliseconds

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

0

6

12

18

24

30

36

42

48

54

60

I

25ºC

125ºC

Fig. 9. Source Current vs. Source-To-

Drain Voltage

0

10

20

30

40

50

60

70

80

90

100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

V