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IXFP130N10T 데이터시트(PDF) 2 Page - IXYS Corporation

부품명 IXFP130N10T
상세설명  TrenchMV Power MOSFET HiperFET
PDF  5 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFP130N10T 데이터시트(HTML) 2 Page - IXYS Corporation

  IXFP130N10T Datasheet HTML 1Page - IXYS Corporation IXFP130N10T Datasheet HTML 2Page - IXYS Corporation IXFP130N10T Datasheet HTML 3Page - IXYS Corporation IXFP130N10T Datasheet HTML 4Page - IXYS Corporation IXFP130N10T Datasheet HTML 5Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA130N10T
IXFP130N10T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10V, ID = 60A, Note 1
55
93
S
C
iss
5080
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
630
pF
C
rss
95
pF
t
d(on)
30
ns
t
r
47
ns
t
d(off)
44
ns
t
f
28
ns
Q
g(on)
104
nC
Q
gs
V
GS= 10V, VDS = 0.5 • VDSS, ID = 25A
30
nC
Q
gd
29
nC
R
thJC
0.42
°C/W
R
thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
130
A
I
SM
Repetitive, pulse width limited by T
JM
350
A
V
SD
I
F = 25A, VGS = 0V, Note 1
1.0
V
t
rr
67
ns
I
RM
4.7
A
Q
rr
160
nC
Notes: 1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
TO-263 (IXFA) Outline
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXFP) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
I
F = 65A, -di/dt = 100A/μs
V
R = 0.5 • VDSS, VGS = 0V
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 25A
R
G = 5Ω (External)



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