IXFC14N80P datasheet(2/4 Pages) IXYS

2 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 14N80P

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 20 V; ID = 7 A, pulse test

iss

3900

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

250

rss

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = 7 A

d(off)

G = 5 Ω (External)

g(on)

GS= 10 V, VDS = 0.5 VDSS, ID = 7 A

thJC

0.75

0.95

°C/W

thCS

0.21

°C/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V,

1.5

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

F = 25 A

250

-di/dt = 100 A/

μs

R = 100 V, VGS = 0 V

0.4

μC

ISOPLUS220TM (IXFC) Outline

Ref: IXYS CO 0177 R0

NOTE:

1. Bottom heatsink (Pin 4) is electrically isolated from

Pin 1, 2, or 3.

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

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