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IXFV10N100P 데이터시트(PDF) 2 Page - IXYS Corporation

부품명 IXFV10N100P
상세설명  Polar Power MOSFET HiPerFET
PDF  4 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFV10N100P 데이터시트(HTML) 2 Page - IXYS Corporation

  IXFV10N100P Datasheet HTML 1Page - IXYS Corporation IXFV10N100P Datasheet HTML 2Page - IXYS Corporation IXFV10N100P Datasheet HTML 3Page - IXYS Corporation IXFV10N100P Datasheet HTML 4Page - IXYS Corporation  
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH10N100P IXFV10N100P
IXFV10N100PS
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS = 20V, ID = 0.5 • ID25, Note 1
4.2
6.5
S
C
iss
3030
pF
C
oss
V
GS
= 0V, V
DS = 25V, f = 1MHz
200
pF
C
rss
34
pF
R
Gi
Gate input resistance
1.8
Ω
t
d(on)
38
ns
t
r
45
ns
t
d(off)
47
ns
t
f
75
ns
Q
g(on)
56
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
19
nC
Q
gd
30
nC
R
thJC
0.33
°C/W
R
thCS
(TO-247 & PLUS220)
0.21
°C/W
Source-Drain Diode
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
10
A
I
SM
Repetitive, pulse width limited by T
JM
40
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.5
V
t
rr
300 ns
I
RM
7.3
A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Note 1: Pulse test, t
≤ 300μs; duty cycle, d ≤ 2%.
I
F = 5A, -di/dt = 100A/μs
V
R = 100V, VGS = 0V
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G
= 3.3
Ω (External)
TO-247 (IXFH) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15
BSC
242 BSC
e
∅ P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline



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