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IXFX520N075T2 데이터시트(PDF) 2 Page - IXYS Corporation

부품명 IXFX520N075T2
상세설명  TrenchT2 GigaMOS HiperFET Power MOSFET
PDF  6 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFX520N075T2 데이터시트(HTML) 2 Page - IXYS Corporation

  IXFX520N075T2 Datasheet HTML 1Page - IXYS Corporation IXFX520N075T2 Datasheet HTML 2Page - IXYS Corporation IXFX520N075T2 Datasheet HTML 3Page - IXYS Corporation IXFX520N075T2 Datasheet HTML 4Page - IXYS Corporation IXFX520N075T2 Datasheet HTML 5Page - IXYS Corporation IXFX520N075T2 Datasheet HTML 6Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK520N075T2
IXFX520N075T2
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 10V, ID = 60A, Note 1
65
105
S
C
iss
41
nF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
4150
pF
C
rss
530
pF
R
GI
Gate Input Resistance
1.36
Ω
t
d(on)
48
ns
t
r
36
ns
t
d(off)
80
ns
t
f
35
ns
Q
g(on)
545
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
177
nC
Q
gd
135
nC
R
thJC
0.12
°C/W
R
thCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
520
A
I
SM
Repetitive, Pulse Width Limited by T
JM
1600
A
V
SD
I
F = 100A, VGS = 0V, Note 1
1.25
V
t
rr
150 ns
I
RM
7
A
Q
RM
357
nC
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A
R
G = 1Ω (External)
I
F = 150A, VGS = 0V
-di/dt = 100A/
μs
V
R = 37.5V
Notes 1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
TO-264 (IXFK) Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190



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