| 전자부품 데이터시트 검색엔진 |
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IXFN26N100P 데이터시트(PDF) 4 Page - IXYS Corporation |
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IXFN26N100P 데이터시트(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXFN26N100P IXYS REF: F_26N100P(86)3-28-08-B Fig. 7. Input Admittance 0 5 10 15 20 25 30 35 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts TJ = 125ºC 25ºC - 40ºC Fig. 8. Transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 ID - Amperes TJ = - 40ºC 25ºC 125ºC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 QG - NanoCoulombs VDS = 500V I D = 13A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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