IXFN40N90P datasheet(1/4 Pages) IXYS

부품명	IXFN40N90P

상세설명	Polar Power MOSFET HiPerFET

PDF	4 Pages

Scroll/Zoom	100%

제조업체	IXYS [IXYS Corporation]

홈페이지	http://www.ixys.com

Logo

1 / 4 page

DS100062(10/08)

V

DSS

= 900V

I

D25

= 33A

R

DS(on)

≤≤≤≤≤ 210mΩ

Ω

t

rr

≤≤≤≤≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C33

A

I

DM

T

C = 25°C, pulse width limited by TJM

80

A

I

A

T

C = 25°C20

A

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

695

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting torque

1.5/13

Nm/lb.in.

Terminal connection torque

1.3/11.5

Nm/lb.in.

Weight

30

g

IXFN40N90P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

3 mA

R

DS(on)

V

GS = 10V, ID = 20A, Note 1

210 m

Ω

PolarTM Power MOSFET

HiPerFETTM

Preliminary Technical Information

Features

International standard package

miniBLOC, with Aluminium nitride

isolation

Avalanche Rated

Low package inductance

Fast intrinsic diode

Advantages

Low gate drive requirement

High power density

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor drives

Robotics and servo controls

G

D

S

miniBLOC, SOT-227

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

유사한 부품 번호 - IXFN40N90P

제조업체	부품명	데이터시트	상세설명
IXYS Corporation	IXFN40N110P	116Kb / 4P	Polar Power MOSFET HiPerFET
	IXFN40N110P	141Kb / 5P	Power MOSFET
	IXFN40N110P	141Kb / 5P	Power MOSFET
	IXFN40N110Q3	125Kb / 5P	N-Channel Enhancement Mode Fast Intrinsic Rectifier
	IXFN40N60	82Kb / 2P	HiPerFET Power MOSFET

More results

유사한 설명 - IXFN40N90P

제조업체	부품명	데이터시트	상세설명
IXYS Corporation	IXFH18N90P	203Kb / 5P	Polar Power MOSFET HiPerFET
	IXFH24N90P	128Kb / 4P	Polar Power MOSFET HiPerFET
	IXFK40N90P	124Kb / 4P	Polar Power MOSFET HiPerFET
	IXFA12N50P	150Kb / 5P	Polar Power MOSFET HiperFET
	IXFH170N10P	146Kb / 5P	Polar HiperFET Power MOSFET
	IXFB30N120P	147Kb / 5P	Polar HiPerFET Power MOSFET
	IXFK30N110P	121Kb / 4P	Polar Power MOSFET HiPerFET
	IXFK32N100P	124Kb / 4P	Polar Power MOSFET HiPerFET
	IXFN30N120P	114Kb / 4P	Polar Power MOSFET HiPerFET
	IXFN40N110P	116Kb / 4P	Polar Power MOSFET HiPerFET

More results

IXFN40N90P 데이터시트(PDF) 1 Page - IXYS Corporation

IXFN40N90P 데이터시트(HTML) 1 Page - IXYS Corporation

유사한 부품 번호 - IXFN40N90P

유사한 설명 - IXFN40N90P

Html Pages

1 2 3 4

데이터시트 다운로드

링크 URL