IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA50N60C4 IXGP50N60C4

IXGH50N60C4

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

e

∅ P

TO-247 Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitter

TO-263 Outline

Pins: 1 - Gate

2 - Drain

TO-220 Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 = Gate

2 = Collector

3 = Emitter

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

20

30

S

C

1900

pF

C

oes

V

100

pF

C

res

60

pF

Q

g

113

nC

Q

ge

I

13

nC

Q

gc

44

nC

t

d(on)

40

ns

t

ri

66

ns

E

on

0.95

mJ

t

d(off)

270

ns

t

fi

63

ns

E

0.84

1.55

mJ

t

d(on)

30

ns

t

ri

45

ns

E

on

1.10

mJ

t

d(off)

210

ns

t

fi

96

ns

E

off

0.90

mJ

R

thJC

0.43 °C/W

R

thCS

TO-247

0.21

°C/W

TO-220

0.50

°C/W

Inductive Load, T

I

V

Note 2

Inductive Load, T

I

V

Note 2

Notes:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V