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1SS367 데이터시트(PDF) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd.

부품명 1SS367
상세설명  SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
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제조업체  PFS [Shenzhen Ping Sheng Electronics Co., Ltd.]
홈페이지  http://ps-pfs.en.alibaba.com/
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1SS367 데이터시트(HTML) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd.

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1SS367
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
Applications
• High Speed Switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum (Peak) Reverse Voltage
VRM
15
V
Reverse Voltage
VR
10
V
Average Forward Current
IO
100
mA
Maximum (Peak) Forward Current
IFM
200
mA
Surge Current (10 ms)
IFSM
1
A
Power Dissipation
Ptot
200
mW
Junction Temperature
TJ
125
O
C
Operating Temperature Range
Topr
- 40 to + 100
O
C
Storage Temperature Range
Ts
- 55 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 5 mA
at IF = 100 mA
VF
0.3
0.5
V
Reverse Current
at VR = 10 V
IR
20
µA
Total Capacitance
at f = 1 MHz
CT
40
pF
Anode
2
Top View
Marking Code: "S3"
Simplified outline SOD-323 and symbol
1
S3
2
PINNING
1
PIN
Cathode
DESCRIPTION


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