Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SFT501 __ __

SFT503 __ __

│

│

│

│

│

TX = TX Level

TXV = TXV Level

S

= S Level

SFT501 and SFT503

Series

5 AMP

200 Volts

HIGH SPEED

PNP Transistor

Features:

• Radiation Tolerant

• Fast Switching

• High Frequency, 50 MHz Typical

• BVCEO 150 Volts Min

• High Linear Gain

• Very Low Leakage and Saturation

• 200ºC Operating Temperature

• Gold Eutectic Die Attach

• Designed for Complementary Use with SFT502 and

SFT504

Maximum Ratings

Symbol

Value

Units

Collector – Emitter Voltage

150

Volts

Collector – Base Voltage

200

Volts

Emitter – Base Voltage

7

Volts

Continues Collector Current

5

Amps

Base Current

1

Amps

Power Dissipation @ TC = 50ºC

Derate above 50ºC

10

66.6

W

mW/ºC

Operating & Storage Temperature

Top & Tstg

-65 to +200

ºC

Maximum Thermal Resistance

Junction to Case

22

ºC/W

TO-5

NOTES:

* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%

1/ For Ordering Information, Price, and Availability Contact Factory.

2/ Screening per MIL-PRF-19500

3/ For Package Outlines Contact Factory.

4/

Unless Otherwise Specified, All Electrical Characteristics

@25ºC.

Available parts:

SFT501

SFT503

PIN ASSIGNMENT

Package

Pin 1

Pin 2

Pin 3 (Case)

TO-5

Emitter

Base

Collector

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

B17BH DATA SHEET #: TR0040D

DOC