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BFP620F 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BFP620F 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() 2007-04-20 BFP620F 1 1 2 4 3 NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metallization for extra high reliability • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description 1 3 4 2 Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP620F R2s 1=B 2=E 3=C 4=E - - TSFP-4 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 2.3 2.1 V Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 mA Base current IB 3 Total power dissipation2) TS ≤ 96°C Ptot 185 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb |
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