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BFP740 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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BFP740 데이터시트(HTML) 2 Page - Infineon Technologies AG |
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2 / 10 page ![]() 2009-12-04 BFP740 2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0°C TA ≤ 0°C VCEO 4 3.5 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 30 mA Base current IB 3 Total power dissipation1) TS ≤ 89°C Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 380 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4 4.7 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 30 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 25 mA, VCE = 3 V, pulse measured hFE 160 250 400 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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