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BSC032NE2LS 데이터시트(PDF) 8 Page - Infineon Technologies AG |
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BSC032NE2LS 데이터시트(HTML) 8 Page - Infineon Technologies AG |
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8 / 12 page ![]() OptiMOS™ Power-MOSFET BSC032NE2LS Electrical characteristics diagrams Final Data Sheet 7 2.0, 2011-03-01 Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(Tj); ID=30 A; VGS=10 V V GS(th)=f(Tj); VGS=VDS; ID=250 µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V DS); VGS=0 V; f=1 MHz I F=f(VSD); parameter: Tj |
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