Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Hyper-Abrupt Junction Type Silicon Composite Varactor

AM Low Voltage Electronic Tuning Applications

Ordering number:ENN6263A

SVC348

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31003TS (KT)/73099GI (KT) No.6263–1/3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

1292

[SVC348]

Features

· Twin type varactor diode for AM electronic tuning

use.

· High capacitance ratio and high quality factor.

· Possible to offer the SVC348 devices in a tape reel

packaging.

Electrical Connection

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Anode

2 : Cathode

3 : Anode

SANYO : SPA

4.0

0.4

0.5

0.4

12

3

2.2

0.4

1.3

1.3

3.0

3.8nom

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

r

e

v

e

RVR

6

1V

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

5

2

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

5

2

1

+

o

t

5

5

–

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

BV

R

)

R

B

(

IR

A

µ

0

1

=6

1V

)

e

d

o

i

d

e

n

O

(

t

n

e

r

r

u

C

e

s

r

e

v

e

RIR

VR V

9

=

0

0

1A

n

e

c

n

a

t

i

c

a

p

a

C

l

a

n

i

m

r

e

t

r

e

t

n

I

)

e

d

o

i

d

e

n

o

f

o

e

u

l

a

v

e

c

n

a

t

i

c

a

p

a

C

(

C V

1

VR

1

*

z

H

M

1

=

f

,

V

1

=*

0

7

4*

5

2

5F

p

C V

6

VR

z

H

M

1

=

f

,

V

6

=5

5F

p

C V

8

VR

z

H

M

1

=

f

,

V

8

=0

26

2F

p

r

o

t

c

a

F

y

t

il

a

u

QQ

VR

z

H

M

1

=

f

,

V

1

=0

0

2

o

i

t

a

R

e

c

n

a

t

i

c

a

p

a

CR

CC V

1

C

/

V

8

z

H

M

1

=

f

,5

.

8

1

2

*

e

c

n

a

r

e

l

o

T

g

n

i

h

c

t

a

M

∆ m

C

n

i

m

C

/

)

n

i

m

C

–

x

a

m

C

(

× 0

0

1

VR

z

H

M

1

=

f

,

V

1

=

5

.

1%

VR

z

H

M

1

=

f

,

V

6

=

0

.

2%

VR

z

H

M

1

=

f

,

V

8

=

0

.

2%

*1 : 1MHz signal : 20mVrms

*2 : Between D1 and D2 Matching Tolerance

k

n

a

RC V

1

)

F

p

(

S5

0

5

o

t

0

7

4

T5

2

5

o

t

5

8

4

Anode

Anode

Cathode

1

2

D1

D2

3