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ICE3AS02G 데이터시트(PDF) 19 Page - Infineon Technologies AG |
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ICE3AS02G 데이터시트(HTML) 19 Page - Infineon Technologies AG |
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19 / 22 page ![]() F3 ICE3AS02 / ICE3AS02G / ICE3BS02 / ICE3BS02G Electrical Characteristics Version 1.2 19 02 Sep 2005 Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP and VVCCPD 4.3.6 Current Limiting Active Burst Mode Level for Comparator C6b VFBC6b 3.25 3.40 3.55 V After Active Burst Mode is entered Overvoltage Detection Limit VVCCOVP 16.1 17.1 18.1 V VFB > 5V VSoftS < 4.0V Thermal Shutdown1) TjSD 130 140 150 °C Spike Blanking tSpike -8.0 - µs 1) The parameter is not subjected to production test - verified by design/characterization Parameter Symbol Limit Values Unit Test Condition min. typ. max. Peak Current Limitation (incl. Propagation Delay Time of external MOS) Vcsth 0.97 1.02 1.07 V dVsense / dt = 0.6V/µs (see Figure 14) Peak Current Limitation during Active Burst Mode VCS2 0.232 0.257 0.282 V Leading Edge Blanking tLEB - 220 - ns VSoftS = 4.4V CS Input Bias Current ICSbias -1.0 -0.2 0 µA VCS =0V Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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