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PCIMX536AVV8C 데이터시트(PDF) 28 Page - Freescale Semiconductor, Inc |
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PCIMX536AVV8C 데이터시트(HTML) 28 Page - Freescale Semiconductor, Inc |
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28 / 178 page ![]() i.MX53xA Automotive and Infotainment Applications Processors, Rev. 2 28 Freescale Semiconductor Electrical Characteristics NOTE The term ‘OVDD’ in this section refers to the associated supply rail of an input or output. The association is shown in Table 113. Figure 3. Circuit for Parameters Voh and Vol for IO Cells 4.3.1 General Purpose I/O (GPIO) DC Parameters The parameters in Table 10 are guaranteed per the operating ranges in Table 6, unless otherwise noted. Table 10 shows DC parameters for GPIO pads, operating at two supply ranges: • 1.1 V to 1.3 V • 1.65 V to 3.1 V Table 10. GPIO I/O DC Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit High-level output voltage1 Voh Iout = –1 mA Iout= specified Ioh Drive OVDD – 0.15 0.8*OVDD —— V Low-level output voltage1 Vol Iout = 1 mA Iout= specified Iol Drive —— 0.15 0.2 × OVDD V High-level output current (1.1-1.3V OVDD) Ioh Vout = 0.8 ×OVDD Low drive Medium drive High drive Max drive –0.85 –1.7 –2.5 –3.4 —— mA Low-level output current (1.1-1.3V OVDD) Iol Vout = 0.2 ×OVDD Low drive Medium drive High drive Max drive 0.9 1.9 2.9 3.8 —— mA High-level output current (1.65-3.1V OVDD) Ioh Vout = 0.8 ×OVDD Low drive Medium drive High drive Max drive –2.1 –4.2 –6.3 –8.4 —— mA |
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